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UT2P06 - P-CHANNEL POWER MOSFET

General Description

using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge.

This UTC UT2P06 can be operated with -4.5V low gate voltage.

Key Features

  • RDS(ON) ≤ 175 mΩ @ VGS= -10V, ID= -0.9A RDS(ON) ≤ 230 mΩ @ VGS= -4.5V, ID= -0.8A.
  • High switching speed.
  • SYMBOL 3 3 2 1 SOT-23-3 (JEDEC TO-236) 2 1 SOT-23 (EIAJ SC-59) 54 6 1 23 SOT-26 1 SOT-89 1 SOT-223.

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Full PDF Text Transcription for UT2P06 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for UT2P06. For precise diagrams, tables, and layout, please refer to the original PDF.

UNISONIC TECHNOLOGIES CO., LTD UT2P06 Power MOSFET -2.0A, -60V (D-S) P-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2P06 is a P-channel enhancement power MOSFET using UTC...

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PTION The UTC UT2P06 is a P-channel enhancement power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON) and low gate charge. This UTC UT2P06 can be operated with -4.5V low gate voltage.  FEATURES * RDS(ON) ≤ 175 mΩ @ VGS= -10V, ID= -0.9A RDS(ON) ≤ 230 mΩ @ VGS= -4.5V, ID= -0.