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UTT80N06 - N-CHANNEL POWER MOSFET

General Description

The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and high switching speed.

It can also withstand high energy pluse in the avalanche and commutation mode.

Key Features

  • RDS(ON)< 10mΩ @ VGS=10V.
  • High switching speed.
  • Improved dv/dt capability.
  • Low Crss(typical 145pF).
  • Low Gate Charge(typical 57nC).
  • SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD UTT80N06 Preliminary 60V, 80A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UTT80N06 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance and high switching speed. It can also withstand high energy pluse in the avalanche and commutation mode. The UTC UTT80N06 is suitable for active power factor correction, high efficient switched mode power supplies and electronic lamp ballast based on half bridge topology, etc.  FEATURES * RDS(ON)< 10mΩ @ VGS=10V * High switching speed * Improved dv/dt capability * Low Crss(typical 145pF) * Low Gate Charge(typical 57nC)  SYMBOL 2.Drain Power MOSFET 1.Gate 3.