CHA6358-99F Datasheet 27-31.5ghz High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA6358-99F 27-31.5GHz High Power Amplifier GaAs Monolithic Microwave.

Datasheet Details

Part number	CHA6358-99F
Manufacturer	United Monolithic Semiconductors
File Size	287.44 KB
Description	27-31.5GHz High Power Amplifier
Datasheet	CHA6358-99F_UnitedMonolithicSemiconductors.pdf

General Description

The CHA6358-99F is a three stages monolithic HPA that typically provides an output power of 31dBm at 1dB gain compression associated to a high IP3 output of 38.5dBm.

It is designed for a wide range of applications, from professional to commercial communication systems The circuit is manufactured with a pHEMT process, 0.15µm gate length.

It is available in chip form.

Key Features

Output power (dBm).
Broadband performances: 27-31.5GHz.
Pout: 31dBm at 1dB compression.
OIP3: 38.5dBm.
Linear gain: 22dB.
DC bias: Vd=6.0Volt@Id=750mA.
Chip size: 2.5x2.5x0.1mm 36 34 32 30 28 50 40 30 20 10 http://www. DataSheet4U. net/ P-1dB 26 Psat 29 PAE at 1dB 0 27 28 30 31 32 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OIP3 Output third order interception point Pout Output Power.

CHA6358-99F Distributor

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