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CHV1206-98F - Low Phase Noise C band HBT VCO

General Description

The CHV1206-98F is a low phase noise C band HBT voltage controlled oscillator that integrates negative resistor, varactors and buffer amplifiers.

It provides an excellent phase noise of 100dBc/Hz at 100kHz offset.

Key Features

  • C-band VCO + C buffers.
  • Fully integrated VCO (no need for external resonator).
  • Low phase noise.
  • High frequency stability.
  • On chip self-biased devices.
  • Available in bare die.
  • Chip size: 2.77x2.77mm² Frequency (GHz) 6.6 6.4 6.2 6 5.8 5.6 5.4 5.2 5 0 2468 Vtune (Volts) 10 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter F_out Output frequency range on RF_out po.

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Datasheet Details

Part number CHV1206-98F
Manufacturer United Monolithic Semiconductors
File Size 275.56 KB
Description Low Phase Noise C band HBT VCO
Datasheet download datasheet CHV1206-98F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHV1206-98F Low Phase Noise C band HBT VCO GaAs Monolithic Microwave IC Description The CHV1206-98F is a low phase noise C band HBT voltage controlled oscillator that integrates negative resistor, varactors and buffer amplifiers. It provides an excellent phase noise of 100dBc/Hz at 100kHz offset. It is designed for a wide range of applications, from space to commercial communication systems. The circuit is fully integrated on InGaP HBT process: 2µm emitter length, via holes through the substrate and high Q passive elements. It is available in chip form. VT Vc RF out Main Features ■ C-band VCO + C buffers ■ Fully integrated VCO (no need for external resonator) ■ Low phase noise ■ High frequency stability ■ On chip self-biased devices ■ Available in bare die ■ Chip size: 2.77x2.