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CHZ050A-SEA - GaN HEMT

Description

The CHZ050A-SEA is an input and output internally-matched packaged Gallium Nitride High Electron Mobility Transistor.

It allows broadband solutions for a variety of RF power applications in C-band.

Features

  • Bandwidth : 5.2-5.8 GHz.
  • Pulsed operating mode.
  • High power: > 50W.
  • High Efficiency: up to 45%.
  • DC bias: VDS =50V @ ID_Q =400mA.
  • MTTF > 106 hours @ Tj=200°C.
  • 50 input and output matched.
  • External input/output bias tees required.
  • RoHS Flange Ceramic package VDS = 50V, ID_Q = 400mA Pulse mode (25µs-10%) Pin = 35dBm PAE Gain Pout Intrinsic performances of the packaged device Main Electrical Characteristics Tcase= +25°C, Pulsed mode, F = 5.2-5.8 GH.

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Datasheet Details

Part number CHZ050A-SEA
Manufacturer United Monolithic Semiconductors
File Size 598.26 KB
Description GaN HEMT
Datasheet download datasheet CHZ050A-SEA Datasheet

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CHZ050A-SEA 50W C Band HPA GaN HEMT on SiC Description The CHZ050A-SEA is an input and output internally-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in C-band. It is proposed in a low parasitic, low thermal resistance package, and doesn’t require any external matching circuitry. The CHZ050A-SEA is well suited for pulsed radar and satcom applications. It is developed on a 0.5µm gate length GaN HEMT process, and is available as a hermetic flange ceramic metal power package Main Features ■ Bandwidth : 5.2-5.
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