CHZ050A-SEA
Description
The CHZ050A-SEA is an input and output internally-matched packaged Gallium Nitride High Electron Mobility Transistor. It allows broadband solutions for a variety of RF power applications in C-band.
Key Features
- Bandwidth : 5.2-5.8 GHz
- Pulsed operating mode
- High power: > 50W
- High Efficiency: up to 45%
- DC bias: VDS =50V @ ID_Q =400mA
- MTTF > 106 hours @ Tj=200°C
- 50 input and output matched
- External input/output bias tees required
- RoHS Flange Ceramic package VDS = 50V, ID_Q = 400mA Pulse mode (25µs-10%) Pin = 35dBm PAE Gain Pout Intrinsic performances of the packaged device Main Electrical Characteristics Tcase= +25°C, Pulsed mode, F = 5.2-5.8 GHz, VDS=50V, ID_Q=400mA Symbol Parameter Min Typ GSS Small Signal Gain 13 15 PSAT PAE Saturated Output Power Max Power Added Efficiency
