UF3C065030K3S Datasheet - UnitedSiC

MOSFET

UF3C065030K3S Features

* w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) Ty

UF3C065030K3S General Description

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device o.

UF3C065030K3S Datasheet (547.74 KB)

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Part number:

UF3C065030K3S

Manufacturer:

UnitedSiC

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547.74 KB

Description:

Mosfet.

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UF3C065030K3S MOSFET UnitedSiC

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UF3C065030K3S Features

UF3C065030K3S General Description

Datasheet Details

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