UF3C065030K3S - MOSFET

UnitedSiC

UF3C065030K3S Datasheet Preview — Preview of UF3C065030K3S PDF

Datasheet Details

Part number	UF3C065030K3S
Manufacturer	UnitedSiC
File Size	547.74 KB
Description	MOSFET
Datasheet	UF3C065030K3S-UnitedSiC.pdf

UF3C065030K3S Product details

Description

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Features

w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) Typical.

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Published: Apr 15, 2020 |