Datasheet Details
| Part number | UF3C065030K3S |
|---|---|
| Manufacturer | UnitedSiC |
| File Size | 547.74 KB |
| Description | MOSFET |
| Datasheet |
 UF3C065030K3S Datasheet
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General Description
United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.
Key Features
- w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) Typical.