Datasheet4U Logo Datasheet4U.com

UF3C065080B3 Datasheet - UnitedSiC

MOSFET

UF3C065080B3 Features

* w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) . Part

UF3C065080B3 General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSF.

UF3C065080B3 Datasheet (489.20 KB)

Preview of UF3C065080B3 PDF

Datasheet Details

Part number:

UF3C065080B3

Manufacturer:

UnitedSiC

File Size:

489.20 KB

Description:

Mosfet.

📁 Related Datasheet

UF3C065080B7S SiC FET (qorvo)

UF3C065080K3S SiC Cascode JFET (ON Semiconductor)

UF3C065080T3S MOSFET (UnitedSiC)

UF3C065030B3 MOSFET (UnitedSiC)

UF3C065030B3 SiC Cascode JFET (ON Semiconductor)

UF3C065030K3S MOSFET (UnitedSiC)

UF3C065030K3S SiC Cascode JFET (ON Semiconductor)

UF3C065030T3S MOSFET (UnitedSiC)

UF3C065040B3 650V SiC Cascode JFET (onsemi)

UF3C065040K3S MOSFET (UnitedSiC)

TAGS

UF3C065080B3 MOSFET UnitedSiC

Image Gallery

UF3C065080B3 Datasheet Preview Page 2 UF3C065080B3 Datasheet Preview Page 3

UF3C065080B3 Distributor