UF3C065080T3S - MOSFET

UnitedSiC

UF3C065080T3S Datasheet Preview — Preview of UF3C065080T3S PDF

Datasheet Details

Part number	UF3C065080T3S
Manufacturer	UnitedSiC
File Size	508.42 KB
Description	MOSFET
Datasheet	UF3C065080T3S-UnitedSiC.pdf

UF3C065080T3S Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

G (1) 1 23 S (3) w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) Part Number UF3C065080T3S Package TO-220-3L Marking UF3C065080T3S Typical.

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Published: Apr 15, 2020 |