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UF3C065080T3S Datasheet - UnitedSiC

MOSFET

UF3C065080T3S Features

* G (1) 1 23 S (3) w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible . under typical operating

UF3C065080T3S General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3C065080T3S Datasheet (508.42 KB)

Preview of UF3C065080T3S PDF

Datasheet Details

Part number:

UF3C065080T3S

Manufacturer:

UnitedSiC

File Size:

508.42 KB

Description:

Mosfet.

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UF3C065080T3S MOSFET UnitedSiC

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