Datasheet Details
| Part number | UF3C065080T3S |
|---|---|
| Manufacturer | UnitedSiC |
| File Size | 508.42 KB |
| Description | MOSFET |
| Datasheet |
 UF3C065080T3S Datasheet
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General Description
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
Key Features
- G (1) 1 23 S (3) w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible . under typical operating conditions) Part Number UF3C065080T3S Package TO-220-3L Marking UF3C065080T3S Typical.