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UnitedSiC

UF3C120040K3S Datasheet Preview

UF3C120040K3S Datasheet

MOSFET

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35mW - 1200V SiC Cascode | UF3C120040K3S
Datasheet
Description
United Silicon Carbide's cascode products co-package its high-
performance G3 SiC JFETs with a cascode optimized MOSFET to produce
the only standard gate drive SiC device in the market today. This series
exhibits ultra-low gate charge, but also the best reverse recovery
characteristics of any device of similar ratings. These devices are
excellent for switching inductive loads when used with recommended RC-
snubbers, and any application requiring standard gate drive.
CASE
G (1)
CASE
D (2)
123
S (3)
Part Number
UF3C120040K3S
Package
TO-247-3L
Marking
UF3C120040K3S
Features
w Typical on-resistance RDS(on),typ of 35mW
w Maximum operating temperature of 175°C
w Excellent reverse recovery
w Low gate charge
w Low intrinsic capacitance
w ESD protected, HBM class 2
w
Very low switching losses (required RC-snubber loss negligible
under typical operating conditions)
Typical Applications
w EV charging
w PV inverters
w Switch mode power supplies
w Power factor correction modules
w Motor drives
w Induction heating
Maximum Ratings
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 1
Pulsed drain current 2
Single pulsed avalanche energy 3
Power dissipation
Maximum junction temperature
Operating and storage temperature
Max. lead temperature for soldering,
1/8” from case for 5 seconds
1 Limited by TJ,max
2 Pulse width tp limited by TJ,max
3 Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS
Ptot
TJ,max
TJ, TSTG
TL
Test Conditions
DC
TC=25°C
TC=100°C
TC=25°C
L=15mH, IAS=4.2A
TC=25°C
Value
1200
-25 to +25
65
47
175
132.3
429
175
-55 to 175
250
Units
V
V
A
A
A
mJ
W
°C
°C
°C
Rev. B, December 2018
1 For more information go to www.unitedsic.com.




UnitedSiC

UF3C120040K3S Datasheet Preview

UF3C120040K3S Datasheet

MOSFET

No Preview Available !

35mW - 1200V SiC Cascode | UF3C120040K3S
Datasheet
Electrical Characteristics (TJ = +25°C unless otherwise specified)
Typical Performance - Static
Parameter
Drain-source breakdown voltage
Total drain leakage current
Total gate leakage current
Drain-source on-resistance
Gate threshold voltage
Gate resistance
Symbol
BVDS
IDSS
IGSS
RDS(on)
VG(th)
RG
Test Conditions
VGS=0V, ID=1mA
VDS=1200V,
VGS=0V, TJ=25°C
VDS=1200V,
VGS=0V, TJ=175°C
VDS=0V, Tj=25°C,
VGS=-20V / +20V
VGS=12V, ID=40A,
TJ=25°C
VGS=12V, ID=40A,
TJ=175°C
VDS=5V, ID=10mA
f=1MHz, open drain
Min
1200
4
Value
Typ
8
35
6
35
73
5
4.5
Max
150
20
45
6
Units
V
mA
mA
mW
V
W
Typical Performance - Reverse Diode
Parameter
Diode continuous forward current 1
Diode pulse current 2
Forward voltage
Reverse recovery charge
Reverse recovery time
Reverse recovery charge
Reverse recovery time
Symbol
IS
IS,pulse
VFSD
Test Conditions
TC=25°C
TC=25°C
VGS=0V, IF=20A,
TJ=25°C
VGS=0V, IF=20A,
TJ=175°C
Value
Min Typ Max
65
175
1.5 2
1.95
Qrr VR=800V, IF=40A,
VGS=-5V,RG_EXT=10W
di/dt=2400A/ms,
trr TJ=25°C
358
25
Qrr VR=800V, IF=40A,
VGS=-5V,RG_EXT=10W
di/dt=2400A/ms,
trr TJ=150°C
259
22
Units
A
A
V
nC
ns
nC
ns
Rev. B, December 2018
2 For more information go to www.unitedsic.com.


Part Number UF3C120040K3S
Description MOSFET
Maker UnitedSiC
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