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UF3C120040K3S - MOSFET

Description

United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today.

Features

  • w Typical on-resistance RDS(on),typ of 35mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w Very low switching losses (required RC-snubber loss negligible under typical operating conditions) Typical.

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Datasheet Details

Part number UF3C120040K3S
Manufacturer UnitedSiC
File Size 548.90 KB
Description MOSFET
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35mW - 1200V SiC Cascode | UF3C120040K3S Datasheet Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads when used with recommended RCsnubbers, and any application requiring standard gate drive.
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