UF3C170400K3S Datasheet - UnitedSiC

MOSFET

UF3C170400K3S Features

* w Typical on-resistance RDS(on),typ of 410mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modul

UF3C170400K3S General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UF3C170400K3S Datasheet (361.82 KB)

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Part number:

UF3C170400K3S

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UnitedSiC

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361.82 KB

Description:

Mosfet.
DATASHEET UF3C170400K3S CASE CASE D (2) G (1) 1 23 S (3) Part Number UF3C170400K3S Package TO-247-3L Marking UF3C170400K3S 1700V-410mW SiC FE.

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UF3C170400K3S Features

UF3C170400K3S General Description

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