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UF3N090800Z - JFET

General Description

United Silicon Carbide, Inc offers the high-performance G3 SiC normally-on JFET transistors.

This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss.

Key Features

  • w Typical on-resistance RDS(on),typ of 735mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical.

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Datasheet Details

Part number UF3N090800Z
Manufacturer UnitedSiC
File Size 348.14 KB
Description JFET
Datasheet download datasheet UF3N090800Z Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATASHEET UF3N090800Z 900V-735mW SiC Normally-on JFET Rev. A, April 2019 Description United Silicon Carbide, Inc offers the high-performance G3 SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation.