Datasheet Details
| Part number | UF3SC065030D8S |
|---|---|
| Manufacturer | UnitedSiC |
| File Size | 438.99 KB |
| Description | MOSFET |
| Datasheet |
 UF3SC065030D8S Datasheet
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General Description
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
Key Features
- w Typical on-resistance RDS(on),typ of 34mW w Maximum operating temperature of 150°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w DFN8X8-4L package for faster switching, clean gate waveforms Typical.