UF3SC065030D8S - MOSFET

UnitedSiC

UF3SC065030D8S Datasheet Preview — Preview of UF3SC065030D8S PDF

Datasheet Details

Part number	UF3SC065030D8S
Manufacturer	UnitedSiC
File Size	438.99 KB
Description	MOSFET
Datasheet	UF3SC065030D8S-UnitedSiC.pdf

UF3SC065030D8S Product details

Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

Features

w Typical on-resistance RDS(on),typ of 34mW w Maximum operating temperature of 150°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w DFN8X8-4L package for faster switching, clean gate waveforms Typical.

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Published: Apr 15, 2020 |