UF3SC065030D8S Datasheet, UnitedSiC

w Typical on-resistance RDS(on),typ of 34mW w Maximum operating temperature of 150°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD prot.

Part Number UF3SC065030D8S Package DFN8X8-4L Marking UF3SC065030D8S w EV charging w PV inverters w Switch mode power.

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “dr.