UJ3C065080T3S Datasheet - UnitedSiC

SiC Cascode JFET

UJ3C065080T3S Features

* w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Part Number UJ3C065080T3S Package TO-220-3L Marking UJ3C065080T3S Typical applications w EV charging w PV i

UJ3C065080T3S General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UJ3C065080T3S Datasheet (592.26 KB)

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UJ3C065080T3S

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UnitedSiC

File Size:

592.26 KB

Description:

Sic cascode jfet.
DATASHEET UJ3C065080T3S CASE CASE D (2) G (1) 1 23 S (3) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-220-3L, 650 V, 80 mohm R.

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UJ3C065080T3S Features

UJ3C065080T3S General Description

Datasheet Details

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