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UJ3N120035K3S Datasheet - UnitedSiC

Power N-Channel JFET

UJ3N120035K3S Features

* w Typical on-resistance RDS(on),typ of 35mW w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical Applications w Over current protection circuits w DC-AC inverters

UJ3N120035K3S General Description

United Silicon Carbide, Inc offers the high-performance G3 SiC normallyon JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal f.

UJ3N120035K3S Datasheet (686.26 KB)

Preview of UJ3N120035K3S PDF

Datasheet Details

Part number:

UJ3N120035K3S

Manufacturer:

UnitedSiC

File Size:

686.26 KB

Description:

Power n-channel jfet.

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UJ3N120035K3S Power N-Channel JFET UnitedSiC

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