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UJN1208K - JFET

General Description

United Silicon Carbide, Inc offers the xJ series of high-performance SiC normally-on JFET transistors.

This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss.

Key Features

  • w Low On-Resistance RDS(on)max of 0.080W w Voltage controlled w Maximum operating temperature of 175°C w Extremely fast switching not dependent on temperature w Low gate charge w Low intrinsic capacitance w RoHS compliant Typical.

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Datasheet Details

Part number UJN1208K
Manufacturer UnitedSiC
File Size 440.29 KB
Description JFET
Datasheet download datasheet UJN1208K Datasheet

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Full PDF Text Transcription (Reference)

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xJ SiC Series | 80mW - 1200V SiC Normally-On JFET | UJN1208K Datasheet Description United Silicon Carbide, Inc offers the xJ series of high-performance SiC normally-on JFET transistors. This series exhibits ultra-low on resistance (RDS(ON)) and gate charge (QG) allowing for low conduction and switching loss. The device normally-on characteristics with low RDS(ON) at VGS = 0 V is also ideal for current protection circuits without the need for active control, as well as for cascode operation. CASE G (1) CASE D (2) 12 3 Part Number UJN1208K S (3) Package TO-247-3L Marking UJN1208K Features w Low On-Resistance RDS(on)max of 0.