MIE-526A2U
Description
The MIE-526A2U is infrared emitting diodes in Ga As technology with Al Ga As window coating molded in pastel pink transparent package.
Package Dimensions
φ5.05 (.200)
Unite: mm ( inches )
5.47 (.215) 7.62 (.300) 5.90 (.230)
Features l l l l l
High radiant power and high radiant intensity Standard T-1 3/4 ( φ 5mm) package Peak wavelength λp = 940 nm Good spectral matching to si-photodetector Radiant angle : 25°
1.00 (.040) FLAT DENOTES CATHODE
23.4 0MIN. (.920) .50 TYP. (.020)
1.00MIN (.040) 2.54 (.100)
Notes : 1. Tolerance is ± 0.25 mm (.010") unless otherwise noted. 2. Protruded resin under flange is 1.5 mm (.059") max. 3. Lead spacing is measured where the leads emerge from the package
Absolute Maximum Ratings
@ TA=25o C Parameter Power Dissipation Peak Forward Current(300pps,10µs pulse) Continuos Forward Current Reverse Voltage Operating Temperature Range Storage Temperature Range Lead Soldering Temperature Maximum Rating 120 1 100 5 -55 C to +100...
