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UT6264B - 8K X 8 BIT LOW POWER CMOS SRAM

Description

SYMBOL A0 A12 I/O1

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Features

  • UT6264B 8K X 8 BIT LOW POWER CMOS SRAM The UT6264B is a 65,536-bit low power CMOS static random access memory organized as 8,192 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT6264B is designed for high-speed and low power.

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Datasheet Details

Part number UT6264B
Manufacturer Utron
File Size 209.01 KB
Description 8K X 8 BIT LOW POWER CMOS SRAM
Datasheet download datasheet UT6264B Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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 UTRON Rev 1.0 FEATURES „ „ UT6264B 8K X 8 BIT LOW POWER CMOS SRAM The UT6264B is a 65,536-bit low power CMOS static random access memory organized as 8,192 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. The UT6264B is designed for high-speed and low power application. It is particularly well suited for battery back-up nonvolatile memory application. The UT6264B operates from a single 5V power supply and all inputs and outputs are fully TTL compatible. ____________________________________________________________________________________________ „ „ „ „ „ „ Access time : 35/70ns (max.) Low power consumption: Operating : 60/40 mA (typical) Standby :0.
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