2SK3461-S - N-Channel MOSFET

VBsemi

Key Features

TrenchFET® Power MOSFET.
Package with Low Thermal Resistance.
100 % Rg and UIS Tested TO-252 GDS Top View D G S N-Channel MOSFET.

2SK3461-S n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	2SK3461-S
Manufacturer	VBsemi
File Size	250.01 KB
Description	N-Channel MOSFET
Datasheet	2SK3461-S Datasheet

Full PDF Text Transcription for 2SK3461-S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SK3461-S. For precise diagrams, and layout, please refer to the original PDF.

2SK3461-S-VB 2SK3461-S-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) ...

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Y VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.0050 0.0120 97 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested TO-252 GDS Top View D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.

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