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MI3130 - N-Channel MOSFET

Download the MI3130 datasheet PDF. This datasheet also covers the MI3130-VB variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Halogen-free.
  • TrenchFET® Power MOSFET.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MI3130-VB-VBsemi.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MI3130
Manufacturer VBsemi
File Size 255.02 KB
Description N-Channel MOSFET
Datasheet download datasheet MI3130 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MI3130-VB MI3130-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 4.5 V 30 0.030 at VGS = 2.5 V ID (A)a 6.8 6.0 Qg (Typ.) 10 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET APPLICATIONS • Load Switches for Portable Devices RoHS COMPLIANT D D G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 6.8a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 6a 6.8 a, b , c TA = 70 °C 6 a, b, c A Pulsed Drain Current IDM 30 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 5.2 2.1b, c TC = 25 °C 6.