V6WL45C - Dual Trench MOS Barrier Schottky Rectifier

VISHAY

Datasheet Details

Part number	V6WL45C
Manufacturer	Vishay
File Size	177.22 KB
Description	Dual Trench MOS Barrier Schottky Rectifier
Datasheet	V6WL45C-VISHAY.pdf

Trench MOS Schottky technology.
Ideal for automated placement.
Low forward voltage drop, low power losses.
High efficiency operation K Dual Trench MOS Barrier Schottky Rectifier TMBS® TO-252 (D-PAK).
Meets MSL level 1 , per J-STD- 020, LF maximum peak of 260 °C.
Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 A A V6WL45C A A K.

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Published: May 12, 2014 |