Full PDF Text Transcription for V6WL45C (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
V6WL45C. For precise diagrams, and layout, please refer to the original PDF.
V6WL45C www.vishay.com Vishay General Semiconductor Ultra Low VF = 0.34 V at IF = 3 A FEATURES • Trench MOS Schottky technology • Ideal for automated placement • Low forw...
View more extracted text
nch MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation K Dual Trench MOS Barrier Schottky Rectifier TMBS® TO-252 (D-PAK) • Meets MSL level 1 , per J-STD- 020, LF maximum peak of 260 °C • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 A A V6WL45C A A K HEATSINK TYPICAL APPLICATIONS For use in high frequency DC/D C conve rters, switching power supplies, freewheelin g diodes, O R-ing diode, and reverse battery protection. MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 3 A (TA = 125 °C)
V6WL45C Datasheet
