Download the VG36648041DT datasheet PDF.
This datasheet also covers the VG36641641DT variant, as both devices belong to the same cmos synchronous dynamic ram family and are provided as variant models within a single manufacturer datasheet.
General Description
4 (word x bit x bank), respectively.
Key Features
Single 3.3V ( ± 0.3V ) power supply.
High speed clock cycle time -6 : 166MHz, available only on 4MX16 option -7 : 143MHz, 133MHz -7L: 133MHz -8H: 100MHz.
Fully synchronous operation referenced to clock rising edge.
Possible to assert random column access in every cycle.
Quad internal banks controlled by A12 & A13 (Bank Select).
Note: The manufacturer provides a single datasheet file (VG36641641DT-VanguardInternationalSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for VG36648041DT (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
VG36648041DT. For precise diagrams, and layout, please refer to the original PDF.
VIS Description 4 (word x bit x bank), respectively. VG36644041DT / VG36648041DT / VG36641641DT CMOS Synchronous Dynamic RAM The VG36644041D, VG36648041D and VG36641641D ...
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Synchronous Dynamic RAM The VG36644041D, VG36648041D and VG36641641D are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304 x 4 x 4, 2,097,152 x 8 x 4 and 1,048,576 x 16 x The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture. All input and outputs are synchronized with the positive edge of the clock.The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).These products are packaged in 54-pin TSOPII. Features • Single 3.3V ( ± 0.
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VG36648041DT Datasheet
