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Vanguard Semiconductor

VS2301BC-A Datasheet Preview

VS2301BC-A Datasheet

P-Channel Advanced Power MOSFET

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VS2301BC-A
-20V/-3A P-Channel Advanced Power MOSFET
Features
P-Channel
Enhancement mode
Fast Switching
Pb-free lead plating; RoHS compliant; Halogen free
V DS
R DS(on),TYP @VGS=-4.5V
R DS(on),TYP @VGS=-3.3V
R DS(on),TYP @VGS=-2.5V
ID
-20
V
86
mΩ
94
mΩ
106
mΩ
-3
A
SOT23
Part ID
V2301BC-A
Package Type
SOT23
Marking
A1SHB
Tape and reel
information
3000pcs/reel
Maximum ratings, at T A =25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage
Gate-Source voltage
IS
Diode continuous forward current
ID
Continuous drain current @VGS=-4.5V
IDM
Pulse drain current tested
PD
Maximum power dissipation
TSTG , TJ
Storage and junction temperature range
Thermal Characteristics
TA =25°C
TA =25°C
TA =70°C
TA =25°C
TA =25°C
RθJL
RJA
Thermal Resistance, Junction-to-Lead
Thermal Resistance, Junction-to-Ambient
Rating
-20
±10
-0.83
-3
-2
-12
1
-55 to 150
80
125
Unit
V
V
A
A
A
A
W
°C
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Preliminary - APR, 2019
www.vgsemi.com




Vanguard Semiconductor

VS2301BC-A Datasheet Preview

VS2301BC-A Datasheet

P-Channel Advanced Power MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
VS2301BC-A
-20V/-3A P-Channel Advanced Power MOSFET
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ T j = 25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=-250μA
-20
--
--
V
Zero Gate Voltage Drain Current(Tj=25)
VDS=-20V,VGS=0V
--
--
1
μA
IDSS
Zero Gate Voltage Drain Current(Tj=125) VDS=-20V,VGS=0V
--
--
100 μA
IGSS
VGS(TH)
Gate-Body Leakage Current
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
VGS=±10V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-3A
VGS=-3.3V, ID=-2A
VGS=-2.5V, ID=-2A
--
-- ±100 nA
-0.4 -0.7 -1.0
V
--
86
115
--
94
130
--
106 155
Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
Switching Characteristics
VDS=-10V,VGS=0V,
f=1MHz
VDS=-10V,ID=-3A,
VGS=-4.5V
355 420 485
pF
35
45
55
pF
30
40
50
pF
--
5.3
--
nC
--
1
--
nC
--
1.4
--
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=-10 V,
ID=-3.3A,
RG=2.7Ω,
VGS=-10V
--
4.6
--
ns
--
19
--
ns
--
29
--
ns
--
23
--
ns
Source- Drain Diode Characteristics@ Tj= 25°C (unless otherwise stated)
VSD
t rr
Q rr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=-1.6A,VGS=0V
Tj=25,Isd=-3A,
VGS=0V
di/dt=-100A/μs
Repetitive rating; pulse width limited by max junction temperature.
Pulse width ≤ 380μs; duty cycle≤ 2%.
--
-0.9 -1.2
V
--
7.7
--
ns
--
3.1
--
nC
CopyrightVanguard Semiconductor Co., Ltd
Preliminary - APR, 2019
www.vgsemi.com


Part Number VS2301BC-A
Description P-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
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