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VS2622AL - N-Channel Advanced Power MOSFET

Key Features

  • N-Channel,2.5V Logic Level Control.
  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=2.5 V.
  • Fast Switching and High efficiency.
  • Pb-free lead plating; RoHS compliant VS2622AL 20V/8A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V R @DS(on),TYP VGS=2.5 V ID 20 V 11 mΩ 12 mΩ 14 mΩ 8A SOT23-3L Part ID VS2622AL Package Type SOT23-3L Marking VS15 Tape and reel information 3000pcs/reel Maximum ratings, at T A=25 °C, unless otherwis.

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Datasheet Details

Part number VS2622AL
Manufacturer Vanguard Semiconductor
File Size 580.14 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VS2622AL Datasheet

Full PDF Text Transcription for VS2622AL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VS2622AL. For precise diagrams, and layout, please refer to the original PDF.

Features  N-Channel,2.5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=2.5 V  Fast Switching and High efficiency  Pb-free lead plating; RoHS...

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.5 V  Fast Switching and High efficiency  Pb-free lead plating; RoHS compliant VS2622AL 20V/8A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V R @DS(on),TYP VGS=2.5 V ID 20 V 11 mΩ 12 mΩ 14 mΩ 8A SOT23-3L Part ID VS2622AL Package Type SOT23-3L Marking VS15 Tape and reel information 3000pcs/reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=4.