VS3009DS - 30V/8A Dual N-Channel Advanced Power MOSFET

Vanguard Semiconductor

Datasheet Details

Part number	VS3009DS
Manufacturer	Vanguard Semiconductor
File Size	254.43 KB
Description	30V/8A Dual N-Channel Advanced Power MOSFET
Datasheet	VS3009DS-VanguardSemiconductor.pdf

VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance.

30V/8A Ron(typ. )=16 mΩ @VGS=10V Ron(typ. )=25 mΩ @VGS=4.5V Low On-Resistance 150°C Operating Temperature Fast Switching Lead-Free, Green Compliant VS3009DS 30V/8A Dual N-Channel Advanced Power MOSFET SOP8.

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Published: Aug 19, 2018 |