VS3009DS Overview
VS3009DS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective.
VS3009DS Details
| Part number | VS3009DS |
|---|---|
| Datasheet | VS3009DS-VanguardSemiconductor.pdf |
| File Size | 254.43 KB |
| Manufacturer | Vanguard Semiconductor |
| Description | 30V/8A Dual N-Channel Advanced Power MOSFET |
|
|