Download the VS30P60AD datasheet PDF.
This datasheet also covers the VS30P60AI variant, as both devices belong to the same p-channel advanced power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
VS30P60AI/AD designed by the trench processing techniques to achieve extremely low on-resistance.
Key Features
Low On-Resistance，5V Logic Level Control Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant.
Note: The manufacturer provides a single datasheet file (VS30P60AI-VanguardSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for VS30P60AD (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
VS30P60AD. For precise diagrams, and layout, please refer to the original PDF.
VS30P60AI VS30P60AD -30V/-60A P-Channel Advanced Power MOSFET Features Low On-Resistance，5V Logic Level Control Fast Switching 100% Avalanche Tested Repetitive Avalan...
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evel Control Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VS30P60AI/AD designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Power applications and a wide variety of other supply applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may
VS30P60AD Datasheet
