VS4080AI/AD
40V/80A N-Channel Advanced Power MOSFET
Features
Low On-Resistance
Fast Switching
100% Avalanche Tested
Repetitive Avalanche Allowed up to Tjmax
Hg-Free, RoHS Compliant
Description
VS4080AI/AD designed by the trench processing techniques to
achieve extremely low on-resistance. Additional features of this
design are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely
efficient and reliable device for use in Motor applications and a
wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
±20 V
V(BR)DSS
TJ
TSTG
IS
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current ①
Mounted on Large Heat Sink
IDM Pulse Drain Current Tested (Sillicon Limit) ①
ID Continuous Drain current@VGS=10V
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
TC =25°C
40
150
-55 to 150
80
V
°C
°C
A
TC =25°C
TC =25°C
TC =25°C
TC =75°C
240
80
32
20
2.0
62.5
A
A
W
W
°C/W
°C/W
EAS
Avalanche Energy, Single Pulsed ②
240 mJ
Copyright Vanguard Semiconductor Co., Ltd
Rev. A– Nov.26th, 2014
Page 1 of 5
www.vgsemi.com
