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Vanguard Semiconductor

VS4080AD Datasheet Preview

VS4080AD Datasheet

N-Channel Advanced Power MOSFET

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VS4080AI/AD
40V/80A N-Channel Advanced Power MOSFET
Features
Low On-Resistance
Fast Switching
100% Avalanche Tested
Repetitive Avalanche Allowed up to Tjmax
Hg-Free, RoHS Compliant
Description
VS4080AI/AD designed by the trench processing techniques to
achieve extremely low on-resistance. Additional features of this
design are a 150°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely
efficient and reliable device for use in Motor applications and a
wide variety of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only;and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
Parameter
Rating
Unit
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
±20 V
V(BR)DSS
TJ
TSTG
IS
Drain-Source Breakdown Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDM Pulse Drain Current Tested (Sillicon Limit)
ID Continuous Drain current@VGS=10V
PD Maximum Power Dissipation
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
TC =25°C
40
150
-55 to 150
80
V
°C
°C
A
TC =25°C
TC =25°C
TC =25°C
TC =75°C
240
80
32
20
2.0
62.5
A
A
W
W
°C/W
°C/W
EAS
Avalanche Energy, Single Pulsed
240 mJ
CopyrightVanguard Semiconductor Co., Ltd
Rev. A– Nov.26th, 2014
Page 1 of 5
www.vgsemi.com




Vanguard Semiconductor

VS4080AD Datasheet Preview

VS4080AD Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

Typicle Electrical Characteristics
VS4080AI/AD
40V/80A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
VGS=0V ID=250μA
VDS=32V,VGS=0V
VDS=32V,VGS=0V
40
--
--
-- --
V
-- 100 nA
-- 10 μA
IGSS Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=250μA 1.0
RDS(ON)
Drain-Source On-State Resistance
VGS=10V, ID=20A
--
RDS(ON)
Drain-Source On-State Resistance
VGS=4.5V, ID=15A
--
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
--
1.6
5.0
6.0
±100
2.5
7.5
8.5
nA
V
m
m
Ciss
Coss
Crss
Qg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
VGS=10V
VGS=4.5V
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Characteristics
VDS=20V,VGS=0V,
f=1MHz
VDS=20V,ID=10A,
VGS=10V
-- 1400 --
-- 220 --
-- 150 --
-- 37 --
26
-- 7 --
-- 18 --
pF
pF
pF
nC
nC
nC
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=20V,
ID=9A,
RG=6.8,
VGS=10V
--
--
--
--
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)
16
15
20
12
--
--
--
--
nS
nS
nS
nS
ISD Source-drain current(Body Diode)
Tc=25
-- -- 80 A
VSD
trr
Qrr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=20A,VGS=0V
Tj=25,Isd=20A,
VGS=0V
di/dt=100A/μs
-- -- 1.3 V
-- 29 --
nS
16 -- nC
Pulse width 300μs; duty cycle2%.
Pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.3mH,RG = 25, IAS =40A, VGS =10V. Part not recommended for use above this value
CopyrightVanguard Semiconductor Co., Ltd
Rev. A– Nov.26th, 2014
Page 2 of 5
www.vgsemi.com


Part Number VS4080AD
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
Total Page 5 Pages
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