• Part: VS4410BTD
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 401.66 KB
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Datasheet Summary

Features - N-Channel,10V Logic Level Control - Enhancement mode - Very low on-resistance RDS(on) @ VGS=10V - 100% Avalanche test - Pb-free lead plating; RoHS pliant 100V/127A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10V ID 100 V 6.7 mΩ 127 A TO-263 Part ID VS4410BTD Package Type TO-263 Marking 4410BTD Tape and reel information 1000PCS/Reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② PD Maximum power dissipation VGS Gate-Source...