VS4559MS mosfet equivalent, n+p-channel advanced power mosfet.
*N-CH: 60V/8A,RDS(ON)=35mΩ
*P-CH: -60V/-7.5A,RDS(ON)=75mΩ
*Low On-Resistance
*150°C Operating Temperature
*Fast Switching
*Lead-Free, Green Produc.
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
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Description
VS4559AS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable devic.
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