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Vanguard Semiconductor

VS4604AT-K Datasheet Preview

VS4604AT-K Datasheet

N-Channel Advanced Power MOSFET

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Features
Enhancement mode
Very low on-resistance RDS(on) @ VGS=4.5 V
Fast Switching and High efficiency
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VS4604AT-K
40V/150A N-Channel Advanced Power MOSFET
V DS
40 V
R @ DS(on),TYP VGS=10 V
3.2 mΩ
R @ DS(on),TYP VGS=4.5V
3.9 mΩ
ID
150 A
TO-220AB
Part ID
VS4604AT-K
Package Type
TO-220AB
Marking
4604AT
Tape and reel
information
50pcs/Tube
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage
Gate-Source voltage
IS
ID
IDM
EAS
Diode continuous forward current
Continuous drain current @VGS=10V
Pulse drain current tested
Avalanche energy, single pulsed
TC =25°C
TC =25°C
TC =100°C
TC =25°C
PD
Maximum power dissipation
PDSM
Maximum power dissipation
TC =25°C
TC =100°C
TA=25°C
TA=70°C
TSTG , TJ Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
RJC
Thermal Resistance, Junction-to-Case
RJA
Thermal Resistance, Junction-to-Ambient
CopyrightVanguard Semiconductor Co., Ltd
Rev A SEP, 2019
Rating
40
±20
150
150
106
600
196
115
58
2
1.3
-55 to 175
Unit
V
V
A
A
A
A
mJ
W
W
W
W
°C
Typical
1.3
62.5
Unit
°C/W
°C/W
www.vgsemi.com




Vanguard Semiconductor

VS4604AT-K Datasheet Preview

VS4604AT-K Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

Typical Characteristics
VS4604AT-K
40V/150A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA
40
Zero Gate Voltage Drain Current
VDS=40V,VGS=0V
--
IDSS
Zero Gate Voltage Drain Current(Tj=125) VDS=40V,VGS=0V
--
--
--
V
--
1
μA
--
100
μA
IGSS
VGS(TH)
RDS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS=±20V,VDS=0V
--
VDS=VGS,ID=250μA 1.2
VGS=10V, ID=40A
--
Tj=100
--
--
±100
nA
1.8
2.5
V
3.2
4
4.3
--
RDS(ON)
Drain-Source On-State Resistance
VGS=4.5V, ID=20A
--
3.9
5
Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
Switching Characteristics
4000 4700 5400
pF
VDS=20V,VGS=0V,
355 415 475
pF
f=1MHz
320 375 430
pF
f=1MHz
--
3.3
--
Ω
--
84
--
nC
VDS=20V,ID=40A,
--
41
--
nC
VGS=10V
--
14
--
nC
--
17
--
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=20V,
ID=40A,
RG=3Ω,
VGS=10V
--
10
--
ns
--
111
--
ns
--
97
--
ns
--
100
--
ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
VSD
Forward on voltage
ISD=40A,VGS=0V
t rr
Reverse Recovery Time
Tj=25,Isd=40A,
VGS=0V
Q rr
Reverse Recovery Charge
di/dt=100A/μs
NOTE: Repetitive rating; pulse width limited by max junction temperature.
--
0.8
1.2
V
--
19
--
ns
--
11
--
nC
Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 28A, VGS =10V. Part not recommended for use above this value
The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C.
Pulse width ≤ 380μs; duty cycle≤ 2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev A SEP, 2019
www.vgsemi.com


Part Number VS4604AT-K
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
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VS4604AT-K Datasheet PDF






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