VS4606AS mosfet equivalent, n+p-channel advanced power mosfet.
*N-CH: 30V/6A, RDS(ON)=30mΩ(Typ)@VGS=4.5V
*P-CH: -30V/-5.2A,RDS(ON)=45mΩ(Typ)@VGS=-4.5V
*Low On-Resistance
*Low Vth Application
*Fast Switching
*1.
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
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Description
VS4606AS designed by the trench processing techniques to achieve extremely low on-resistance. And fast switching speed and improved transfer effective . These features combine to make this design an extremely efficient and reliable devic.
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