VSD013N10MS Datasheet | Vanguard Semiconductor

Features - N-Channel - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - 100% Avalanche test - Pb-free lead plating; RoHS pliant 100V/52A N-Channel Advanced Power MOSFET V DS 100 V R @DS(on),TYP VGS=10 V 11 mΩ R @DS(on),TYP VGS=4.5 V 12 mΩ I D 52 A TO-252 Part ID VSD013N10MS Package Type TO-252 Marking 013N10M Tape and reel information 3000PCS/Reel Maximum ratings, at T j=25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② TC =25°C TC =25°C TA...