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Vanguard Semiconductor

VSF450N70HS3 Datasheet Preview

VSF450N70HS3 Datasheet

N-Channel Advanced Power MOSFET

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VSF450N70HS3
700V/11A N-Channel Advanced Power MOSFET
Features
Extremely low gate charge
100% avalanche tested
Super Junction Technology
Pb-free lead plating; RoHS compliant; Halogen free
V DS
R @ DS(on),TYP VGS=10V
ID
700 V
350 mΩ
11
A
TO-220SF
Part ID
VSF450N70HS3
Package Type
TO-220SF
Marking
450N70H
Tube Information
50pcs/Tube
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage
Gate-Source voltage
IS
ID
IDM
EAS
Diode continuous forward current
Continuous drain current @VGS=10V
Pulse drain current tested
Avalanche energy, single pulsed
PD
Maximum power dissipation
TSTG , TJ
Storage and Junction Temperature Range
Thermal Characteristics
Symbol
Parameter
Rθ JC
Thermal Resistance, Junction-to-Case
Rθ JA
Thermal Resistance, Junction-to-Ambient
TC =25°C
TC =25°C
TC =100°C
TC =25°C
TC =25°C
TC =100°C
Rating
700
±30
11
11
7
33
206
26
10
-55 to 150
Typical
4.7
62.5
Unit
V
V
A
A
A
A
mJ
W
W
°C
Unit
°C/W
°C/W
Copyright© Vanguard Semiconductor Co., Ltd
Rev A – AUG, 2019
www.vgsemi.com




Vanguard Semiconductor

VSF450N70HS3 Datasheet Preview

VSF450N70HS3 Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

Electrical Characteristics
VSF450N70HS3
700V/11A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=250μA 700
--
--
V
Zero Gate Voltage Drain Current
VDS=700V,VGS=0V
--
--
1
μA
IDSS
Zero Gate Voltage Drain Current(Tj=125) VDS=560V,VGS=0V
--
--
50
μA
IGSS
VGS(TH)
RDS(ON)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS=±30V,VDS=0V
--
--
±100
nA
VDS=VGS,ID=250μA 2.4
3
3.6
V
VGS=10V, ID=5.5A
--
350
420
Tj=100
--
510
--
Dynamic Electrical Characteristics @ T j= 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Q gs
Gate-Source Charge
Q gd
Gate-Drain Charge
Switching Characteristics
655
770
885
pF
VDS=30V,VGS=0V,
290
340
390
pF
f=1MHz
15
20
25
pF
--
18
--
nC
VDS=350V,ID=11A,
--
4.2
--
nC
VGS=10V
--
6.4
--
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=350V,
ID=11A,
RG=10Ω,
VGS=10V
--
40
--
ns
--
36
--
ns
--
103
--
ns
--
107
--
ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
VSD
Forward on voltage
ISD=11A,VGS=0V
t rr
Reverse Recovery Time
Tj=25,Isd=11A,
VGS=0V
Q rr
Reverse Recovery Charge
di/dt=100A/μs
NOTE: Repetitive rating; pulse width limited by max junction temperature.
--
0.9
1.2
V
--
285
--
ns
--
2.9
--
μC
Limited by TJmax, starting TJ = 25°C, L = 8mH, RG = 25Ω, IAS = 7A, VGS =10V. Part not recommended for use above this value.
Pulse width ≤ 380μs; duty cycle≤ 2%.
Copyright© Vanguard Semiconductor Co., Ltd
Rev A – AUG, 2019
www.vgsemi.com


Part Number VSF450N70HS3
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
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VSF450N70HS3 Datasheet PDF






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