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VSI008N10MS - N-Channel Advanced Power MOSFET

Key Features

  • N-Channel,5V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=4.5 V.
  • VitoMOS® ⅡTechnology.
  • 100% Avalanche test.
  • Pb-free lead plating; RoHS compliant VSI008N10MS 100V/94A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 100 V 6 mΩ 7.8 mΩ 94 A TO-251SL Part ID VSI008N10MS Package Type TO-251SL Marking 008N10M Tape and reel information 75pcs/Tube Maximum ratings, at TA =25°C, unless otherw.

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Datasheet Details

Part number VSI008N10MS
Manufacturer Vanguard Semiconductor
File Size 654.25 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VSI008N10MS Datasheet

Full PDF Text Transcription for VSI008N10MS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VSI008N10MS. For precise diagrams, and layout, please refer to the original PDF.

Features  N-Channel,5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® ⅡTechnology  100% Avalanche test  Pb-free lead pl...

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S=4.5 V  VitoMOS® ⅡTechnology  100% Avalanche test  Pb-free lead plating; RoHS compliant VSI008N10MS 100V/94A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 100 V 6 mΩ 7.