900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Vanguard Semiconductor

VSM008N07HS Datasheet Preview

VSM008N07HS Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

Features
N-Channel10V Logic Level Control
Enhancement mode
Low on-resistance RDS(on) @ VGS=10V
Fast Switching
100% Avalanche Test
Pb-free lead plating; RoHS compliant
VSM008N07HS
70V/83A N-Channel Advanced Power MOSFET
V DS
R @DS(on),TYP VGS=10 V
ID
70 V
7.3 mΩ
83 A
TO-263
Part ID
VSM008N07HS
Package Type
TO-263
Marking
008N07H
Tape and reel
information
800pcs/Reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
IS
Drain-Source breakdown voltage
Diode continuous forward current
ID Continuous drain current@VGS=10V
IDM
EAS
Pulse drain current tested
Avalanche energy, single pulsed
PD Maximum power dissipation
VGS Gate-Source voltage
TSTG TJ
Storage and operating temperature range
Thermal Characteristics
Symbol
Parameter
RJC Thermal Resistance-Junction to Case
RJA Thermal Resistance Junction-Ambient
TC =25°C
TC =25°C
TC =100°C
TC =25°C
TC =25°C
Rating
70
83
83
52
332
196
100
±25
-55 to 175
Typical
1.25
62.5
Unit
V
A
A
A
A
mJ
W
V
°C
Unit
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev A - JUN, 2017
www.vgsemi.com




Vanguard Semiconductor

VSM008N07HS Datasheet Preview

VSM008N07HS Datasheet

N-Channel Advanced Power MOSFET

No Preview Available !

VSM008N07HS
70V/83A N-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
V(BR)DSS
IDSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
VGS=0V, ID=250μA
VDS=70V,VGS=0V
VDS=70V,VGS=0V
70
--
--
-- --
V
-- 1 μA
-- 100 μA
IGSS
VGS(TH)
Gate-Body Leakage Current
Gate Threshold Voltage
VGS=±25V,VDS=0V
VDS=VGS,ID=250μA
--
2
RDS(ON)
Drain-Source On-State Resistance
VGS=10V, ID=40A
--
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
--
2.9
7.3
±100
4
9
nA
V
Ciss Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg Gate Resistance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Characteristics
VDS=30V,VGS=0V,
f=1MHz
f=1MHz
VDS=35V,ID=40A,
VGS=10V
-- 3330 --
-- 275 --
-- 230 --
-- 1.7 --
-- 26 --
-- 7.8 --
-- 11 --
pF
pF
pF
Ω
nC
nC
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=35V,
ID=40A,
RG=3Ω,
VGS=10V
--
--
--
--
Source- Drain Diode Characteristics@ TJ = 25°C (unless otherwise stated)
11
5.8
49
6.9
--
--
--
--
nS
nS
nS
nS
VSD
trr
Qrr
NOTE:
Forward on voltage
Reverse Recovery Time
Reverse Recovery Charge
ISD=40A,VGS=0V
Tj=25,Isd=40A,
VGS=0V
di/dt=500A/μs
-- 0.85 1.2
-- 12 --
17
V
nS
nC
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.5mH, RG = 25Ω, IAS = 28A, VGS =10V. Part not recommended for use above this value
Pulse width ≤ 300μs; duty cycle≤ 2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev A - JUN, 2017
www.vgsemi.com


Part Number VSM008N07HS
Description N-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
Total Page 5 Pages
PDF Download

VSM008N07HS Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 VSM008N07HS N-Channel Advanced Power MOSFET
Vanguard Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy