VSO009N06MS-G Datasheet | Vanguard Semiconductor

Features - Enhancement mode - Low on-resistance RDS(on) @ VGS=4.5 V - Vito MOS® Ⅱ Technology - 100% Avalanche test - Pb-free lead plating; Ro HS pliant 60V/15A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V ID 8 mΩ 14 mΩ SOP8 Part ID VSO009N06MS-G Package Type SOP8 Marking 009N06MG Tape and reel information 3000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V IDM EAS Pulse drain current tested ① Avalanche energy, single pulsed ② Maximum power dissipation TSTG , TJ Storage and junction temperature range Thermal Characteristics Symbol Parameter TA =25°C TA =25°C TA =100°C TA =25°C TA =25°C RθJL R...