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Vanguard Semiconductor

VSO050P06MS Datasheet Preview

VSO050P06MS Datasheet

P-Channel Advanced Power MOSFET

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Features
Enhancement mode
Low on-resistance RDS(on) @ VGS=-4.5 V
Fast Switching and High efficiency
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
VSO050P06MS
-60V/-7A P-Channel Advanced Power MOSFET
V DS
-60 V
R @ DS(on),TYP VGS=-10 V
39 mΩ
R @ DS(on),TYP VGS=-4.5 V
49
mΩ
ID
-7
A
SOP8
Part ID
VSO050P06MS
Package Type
SOP8
Marking
050P06M
Tape and reel
information
3000PCS/Reel
Maximum ratings, at TA =25°C, unless otherwise specified
Symbol
Parameter
V(BR)DSS
VGS
Drain-Source breakdown voltage
Gate-Source voltage
IS
ID
IDM
EAS
Diode continuous forward current
Continuous drain current @VGS=-10V
Pulse drain current tested
Avalanche energy, single pulsed
PD
Maximum power dissipation
TSTG , TJ Storage and junction temperature range
Thermal Characteristics
Symbol
Parameter
TA =25°C
TA =25°C
TA =70°C
TA =25°C
TA =25°C
TA =70°C
RθJL
Thermal Resistance, Junction-to-Lead
RθJA
Thermal Resistance, Junction-to-Ambient
Rating
-60
±20
-2.6
-7
-5.5
-28
25
3.1
2
-55 to 150
Typical
24
40
Unit
V
V
A
A
A
A
mJ
W
W
°C
Unit
°C/W
°C/W
CopyrightVanguard Semiconductor Co., Ltd
Rev AAUG, 2019
www.vgsemi.com




Vanguard Semiconductor

VSO050P06MS Datasheet Preview

VSO050P06MS Datasheet

P-Channel Advanced Power MOSFET

No Preview Available !

VSO050P06MS
-60V/-7A P-Channel Advanced Power MOSFET
Symbol
Parameter
Condition
Min. Typ. Max. Unit
Static Electrical Characteristics @ Tj=25°C (unless otherwise stated)
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0V, ID=-250μA -60
--
--
V
Zero Gate Voltage Drain Current
VDS=-60V,VGS=0V
--
--
-1
μA
IDSS
Zero Gate Voltage Drain Current( Tj =125) VDS=-60V,VGS=0V
--
--
-100
μA
IGSS
Gate-Body Leakage Current
VGS=±20V,VDS=0V
--
--
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID=-250μA
-1.3 -2.0 -2.4
V
RDS(ON) Drain-Source On-State Resistance
RDS(ON)
Drain-Source On-State Resistance
VGS=-10V, ID=-6A
--
Tj =100
--
VGS=-4.5V, ID=-5A
--
39
55
50
--
49
69
Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated)
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg (-10V) Total Gate Charge
Qg (-4.5V Total Gate Charge
Q) gs
Gate-Source Charge
Q gd
Gate-Drain Charge
Switching Characteristics
1470 1730 1990
pF
VDS=-30V,VGS=0V,
75
90
105
pF
f=1MHz
70
80
90
pF
--
36
--
nC
VDS=-30V,ID=-6A,
--
18
--
nC
VGS=-10V
--
6.5
--
nC
--
8.5
--
nC
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD=-30V,
ID=-6A,
RG=2.7Ω,
VGS=-10V
--
7.2
--
ns
--
13
--
ns
--
105
--
ns
--
39
--
ns
Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated)
VSD
Forward on voltage
t rr
Reverse Recovery Time
Q rr
Reverse Recovery Charge
ISD=-6A,VGS=0V
Tj=25,Isd=-6A,
VGS=0V
di/dt=-100A/μs
--
-0.9 -1.2
V
--
18
--
ns
--
16
--
nC
NOTE:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = -10A, VGS =-10V. Part not recommended for use above this value
Pulse width ≤ 380μs; duty cycle≤ 2%.
CopyrightVanguard Semiconductor Co., Ltd
Rev AAUG, 2019
www.vgsemi.com


Part Number VSO050P06MS
Description P-Channel Advanced Power MOSFET
Maker Vanguard Semiconductor
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