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VSP011P03MD - Dual P-Channel Advanced Power MOSFET

Key Features

  • Dual P-Channel,-5V Logic Level Control.
  • Enhancement mode.
  • Very low on-resistance RDS(on) @ VGS=-4.5 V.
  • Fast Switching.
  • 100% Avalanche test.
  • Pb-free lead plating; RoHS compliant V DS -30 V R @DS(on),TYP VGS=-10 V 11 mΩ R @DS(on),TYP VGS=-4.5 V 15 mΩ I D -18 A Dual PDFN5x6 Part ID VSP011P03MD Package Type PDFN5x6 Marking 011P03MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS I.

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Datasheet Details

Part number VSP011P03MD
Manufacturer Vanguard Semiconductor
File Size 303.24 KB
Description Dual P-Channel Advanced Power MOSFET
Datasheet download datasheet VSP011P03MD Datasheet

Full PDF Text Transcription for VSP011P03MD (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VSP011P03MD. For precise diagrams, and layout, please refer to the original PDF.

VSP011P03MD -30V/-18A Dual P-Channel Advanced Power MOSFET Features  Dual P-Channel,-5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4....

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Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.5 V  Fast Switching  100% Avalanche test  Pb-free lead plating; RoHS compliant V DS -30 V R @DS(on),TYP VGS=-10 V 11 mΩ R @DS(on),TYP VGS=-4.