• Part: VSR080N06MS
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 321.44 KB
Download VSR080N06MS Datasheet PDF
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Datasheet Summary

Features - N-Channel - Enhancement mode - Very low on-resistance - Fast Switching - High Effective - Pb-free lead plating; RoHS pliant 60V/4A N-Channel Advanced Power MOSFET V DS R DS(on),typ@VGS=10V R DS(on),typ@VGS=4.5V ID 70 mΩ 85 mΩ SOT89 Part ID Package Type SOT89 Marking 080N06 Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage Continuous drain current@VGS=10V Pulse drain current tested ① Maximum power dissipation Diode Continuous Forward Current Maximum Junction...