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1N1183 - Power Silicon Rectifier Diodes

Features

  • Low leakage current series.
  • Good surge current capability up to 1000 A.
  • Can be supplied to meet stringent military, aerospace and other high reliability requirements.
  • Compliant to RoHS directive 2002/95/EC DO-203AB (DO-5).

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Datasheet Details

Part number 1N1183
Manufacturer Vishay
File Size 291.62 KB
Description Power Silicon Rectifier Diodes
Datasheet download datasheet 1N1183 Datasheet
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Full PDF Text Transcription

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1N1183, 1N3765, 1N1183A, 1N2128A Series Vishay High Power Products Power Silicon Rectifier Diodes, 35 A/40 A/60 A DESCRIPTION/FEATURES • Low leakage current series • Good surge current capability up to 1000 A • Can be supplied to meet stringent military, aerospace and other high reliability requirements • Compliant to RoHS directive 2002/95/EC DO-203AB (DO-5) PRODUCT SUMMARY IF(AV) 35 A/40 A/60 A MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS 1N1183 1N3765 IF(AV) IFSM TC 50 Hz 60 Hz 35 (1) 140 (1) 480 500 (1) 35 (1) 140 (1) 380 400 (1) I2t 50 Hz 60 Hz 1140 1040 730 670 I2√t VRRM Range 16 100 50 to 600 (1) 10 300 700 to 1000 (1) Note (1) JEDEC registered values ELECTRICAL SPECIFICATIONS 1N1183A 40 (1) 150 (1) 765 800 (1) 2900 2650 41 000 50 to 600 (1) 1N2
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