20WT04FN Key Features
- 175 °C high performance Schottky diode
- Very low forward voltage drop
- Extremely low reverse leakage
- Optimized VF vs. IR trade off for high efficiency
- Increased ruggedness for reverse avalanche capability
- RBSOA available
- Negligible switching losses
- Submicron trench technology
- Full lead (Pb)-free and RoHS pliant devices
- Qualified for AEC Q101