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Vishay Intertechnology Electronic Components Datasheet

2N6661JANTX Datasheet

N-Channel 90 V (D-S) MOSFET

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2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
N-Channel 90 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () at VGS = 10 V
Configuration
90
4
Single
TO-205AD
(TO-39)
S
1
2
G
3
D
Top View
ORDERING INFORMATION
PART
2N6661
2N6661-2
2N6661JANTX
2N6661JANTXV
PACKAGE
TO-205AD
(TO-39)
FEATURES
• Military Qualified
• Low On-Resistence: 3.6
• Low Threshold: 1.6 V
• Low Input Capacitance: 35 pF
• Fast Switching Speed: 6 ns
• Low Input and Output Leakage
BENEFITS
• Guaranteed Reliability
• Low Offset Voltage
• Low-Voltage Operation
• Easily Driven Without Buffer
• High-Speed Circuits
• Low Error Voltage
APPLICATIONS
• Hi-Rel Systems
• Direct Logic-Level Interface: TTL/CMOS
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories, Transistors, etc.
• Battery Operated Systems
• Solid-State Relays
DESCRIPTION/DSCC
PART NUMBER
Commercial
Commercial, Lead (Pb)-free
wwSwee.v-is2hFalyo.wcoDmo/cduomc?e6n7t884
JANTX2N6661 (std Au leads)
JANTX2N6661 (with solder)
JANTX2N6661P (with PIND)
JANTXV2N6661 (std Au leads)
JANTXV2N6661P (with PIND)
VISHAY ORDERING
PART NUMBER
2N6661
2N6661-E3
2N6661-2
2N6661JTX02
2N6661JTXL02
2N6661JTXP02
2N6661JTXV02
2N6661JTVP02
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TC = 100 °C
ID
Pulsed Drain Currenta
IDM
Maximum Power Dissipation
TC = 25 °C
TA = 25 °C
PD
Thermal Resistance, Junction-to-Ambientb
RthJA
Thermal Resistance, Junction-to-Case
RthJC
Operating Junction and Storage Temperature Range
TJ, Tstg
Notes
a. Pulse width limited by maximum junction temperature.
b. Not required by military spec.
LIMIT
90
± 20
0.86
0.54
3
6.25
0.725
170
20
- 55 to 150
UNIT
V
A
W
°C/W
°C
S11-1542-Rev. D, 01-Aug-11
1
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

2N6661JANTX Datasheet

N-Channel 90 V (D-S) MOSFET

No Preview Available !

2N6661, 2N6661-2, 2N6661JANTX, 2N6661JANTXV
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS
VDS = 0 V, ID = 10 μA
VDS = VGS, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
TA = - 55 °C
TA = 125 °C
Gate-Body Leakage
IGSS
VGS = ± 20 V
VDS = 0 V
TA = 125 °C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 72 V
TA = 125 °C
On-State Drain Currentb
ID(on)
VGS = 10 V
VDS = 10 V
VGS = 5 V
ID = 0.3 A
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V
ID = 1 A
TA = 125 °Cd
Forward Transconductanceb
gfs VDS = 7.5 V, ID = 0.475 A
Diode Forward Voltage
VSD VGS = 0 V
IS = 0.86 A
Dynamic
Input Capacitance
Ciss
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VGS = 0 V
VDS = 25 V, f = 1 MHz
Drain-Source Capacitance
Cds
Switchingc
Turn-On Time
Turn-Off Time
tON VDD = 25 V, RL = 23
tOFF ID 1 A, VGEN = 10 V, Rg = 23
Notes
a. FOR DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW 300 μs duty cycle 2 %.
c. Switching time is essentially independent of operating temperature.
d. This parameter not registered with JEDEC.
MIN.
90
0.8
-
0.3
-
-
-
-
-
-
-
-
170
0.7
-
-
-
-
-
-
LIMITS
TYP.b
MAX.
125 -
1.6 2
1.8 2.5
1.3 -
- ± 100
- ± 500
-1
- 100
1.8 -
3.8 5.3
3.6 4
6.7 7.5
340 -
0.9 1.4
35 50
15 40
2 10
30 -
6 10
8 10
UNIT
V
nA
μA
mA
mS
V
pF
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-1542-Rev. D, 01-Aug-11
2
Document Number: 70225
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number 2N6661JANTX
Description N-Channel 90 V (D-S) MOSFET
Maker Vishay
Total Page 6 Pages
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