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Vishay Intertechnology Electronic Components Datasheet

50N04-07L Datasheet

SUD50N04-07L

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50N04-07L pdf
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SUD50N04-07L
Vishay Siliconix
N-Channel 40-V (D-S), 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
40 0.0074 at VGS = 10 V
0.0011 at VGS = 4.5 V
ID (A)c
65
54
FEATURES
• TrenchFET® Power MOSFETS
• 175 °C Junction Temperature
• Low Threshold
Available
RoHS*
COMPLIANT
TO-252
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N04-07L
SUD50N04-07L (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 100 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Avalanche Energya
L = 0.1 mH
EAS
Power Dissipation
TC = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
40
± 20
65c
46c
100
40
80
65
- 55 to 175
Unit
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambientb
t 10 sec
Steady State
Symbol
RthJA
Junction-to-Case
RthJC
Notes:
a. Duty cycle 1 %.
b. Surface Mounted on 1" FR4 board.
c. Based on maximum allowable Junction Temperature. Package limitation current is 50 A.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72344
S-71661-Rev. C, 06-Aug-07
Typical
18
40
1.9
Maximum
22
50
2.3
Unit
°C/W
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

50N04-07L Datasheet

SUD50N04-07L

No Preview Available !

50N04-07L pdf
SUD50N04-07L
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Dynamicb
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 32 V, VGS = 0 V
VDS = 32 V, VGS = 0 V, TJ = 125 °C
VDS = 32 V, VGS = 0 V, TJ = 175 °C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125 °C
VGS = 10 V, ID = 20 A, TJ = 175 °C
VGS = 4.5 V, ID = 10 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Chargec
Ciss
Coss
Crss
Qg
VGS = 0 V, VDS = 25 V, f = 1 MHz
Gate-Source Chargec
Qgs VDS = 20 V, VGS = 10 V, ID = 50 A
Gate-Drain Chargec
Qgd
Gate Resistance
Turn-On Delay Timec
Rg
td(on)
Rise Timec
Turn-Off Delay Timec
tr
td(off)
VDD = 20 V, RL = 0.4 Ω
ID 50 A, VGEN = 10 V, RG = 2.5 Ω
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics
Continuous Current
IS
(TC = 25 °C)b
Pulsed Current
ISM
Forward Voltagea
VSD IF = 30 A, VGS = 0 V
Reverse Recovery Time
trr IF = 30 A, di/dt = 100 A/µs
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Min Typ Max Unit
40
V
13
± 100
nA
1
50 µA
150
65 A
0.006 0.0074
0.012
0.015
Ω
0.0085 0.011
20 57
S
2800
320
190
50
10
10
2.0
11
20
40
15
0.90
30
75
20
30
60
25
43
100
1.50
45
pF
nC
Ω
ns
A
V
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72344
S-71661-Rev. C, 06-Aug-07


Part Number 50N04-07L
Description SUD50N04-07L
Maker Vishay
Total Page 6 Pages
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