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Vishay Intertechnology Electronic Components Datasheet

80PFR80 Datasheet

Standard Recovery Diode

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80PF(R)...(W) Series
Vishay High Power Products
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 80 A
80PF(R)...
80PF(R)...W
DO-203AB (DO-5)
DO-203AB (DO-5)
FEATURES
• High surge current capability
• Designed for a wide range of applications
• Stud cathode and stud anode version
• Wire version available
• Low thermal resistance
• UL approval pending
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for multiple level
PRODUCT SUMMARY
IF(AV)
80 A
TYPICAL APPLICATIONS
• Battery chargers
• Converters
• Power supplies
• Machine tool controls
• Welding
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
IF(AV)
IF(RMS)
IFSM
I2t
VRRM
TJ
TC
50 Hz
60 Hz
50 Hz
60 Hz
Range
VALUES
80
140
126
1500
1570
11 250
10 230
400 to 1200
- 55 to 180
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
40
80PF(R)...(W)
80
120
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
960
1440
UNITS
A
°C
A
A
A2s
V
°C
IRRM MAXIMUM
AT TJ = 150 °C
mA
9
Document Number: 93526
Revision: 20-May-09
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

80PFR80 Datasheet

Standard Recovery Diode

No Preview Available !

80PF(R)...(W) Series
Vishay High Power Products
Standard Recovery Diodes,
Generation 2 DO-5 (Stud Version), 80 A
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
at case temperature
IF(AV)
180° conduction, half sine wave
Maximum RMS forward current
IF(RMS)
Maximum peak, one-cycle forward,
non-repetitive surge current
IFSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Low level value of threshold voltage
Low level value of forward
slope resistance
Maximum forward voltage drop
I2t
VF(TO)
rf
VFM
t = 10 ms
t = 8.3 ms
No voltage
reapplied
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial TJ = 150 °C
t = 10 ms
t = 8.3 ms
100 % VRRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
(16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum
Ipk = 220 A, TJ = 25 °C, tp = 400 µs rectangular wave
VALUES
80
140
126
1500
1570
1260
1320
11 250
10 230
7950
7200
112 500
0.73
3.0
1.40
UNITS
A
°C
A
A
A2s
A2s
V
mΩ
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating and
storage temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
DC operation
Maximum thermal resistance,
case to heatsink
RthCS Mounting surface, smooth, flat and greased
Not lubricated thread, tighting on nut (1)
Maximum allowable
mounting torque (+ 0 %, - 10 %)
Lubricated thread, tighting on nut (1)
Not lubricated thread, tighting on hexagon (2)
Lubricated thread, tighting on hexagon (2)
Approximate weight
Case style
See dimensions - link at the end of datasheet
Notes
(1) Recommended for pass-through holes
(2) Torque must be appliable only to hexagon and not to plastic structure, recommended for holed heatsink
VALUES
- 55 to 180
UNITS
°C
0.30
K/W
0.25
3.4
(30)
2.3
(20)
N·m
4.2
(lbf · in)
(37)
3.2
(28)
15.8
g
0.56
oz.
DO-203AB (DO-5)
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 93526
Revision: 20-May-09


Part Number 80PFR80
Description Standard Recovery Diode
Maker Vishay
PDF Download

80PFR80 Datasheet PDF






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