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Vishay Intertechnology Electronic Components Datasheet

CNY66 Datasheet

Optocoupler Phototransistor

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CNY64, CNY65, CNY66
Vishay Semiconductors
Optocoupler, Phototransistor Output, Very High Isolation Voltage
CNY64
Top View
A
C
CNY65
C
E
DVE
CNY66
17187-5
17187-4
DESCRIPTION
The CNY64, CNY65, and CNY66 consist of a
phototransistor optically coupled to a gallium arsenide
infrared-emitting diode in a 4 pin plastic package.
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
DIN EN 60747-5-2 (VDE 0884)
Optocoupler for electrical safety requirements
IEC 60950/EN 60950
Office machines
VDE 0804
Telecommunication apparatus and data processing
IEC60065
Safety for mains-operated electronic and related
household apparatus
VDE 0700/IEC 60335
Household equipment
VDE 0160
Electronic equipment for electrical power installation
VDE 0750/IEC60601
Medical equipment
FEATURES
• Rated recurring peak voltage (repetitive)
VIORM = 1450 Vpeak
• Thickness through insulation 3 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI 200
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
• for appl. class I - IV at mains voltage 300 V
• for appl. class I - IV at mains voltage 600 V
• for appl. class I - III at mains voltage 1000 V according
to DIN EN 60747-5-2 (VDE 0884), suitable for:
- Switch-mode power supplies
- Line receiver
- Computer peripheral interface
- Microprocessor system interface
AGENCY APPROVALS
• UL1577, file no. E76222 system code H, J, and K
• DIN EN 60747-5-2 (VDE 0884)/DIN EN 60747-5-5
(pending), available with option 1
• VDE related features:
- rated impulse voltage (transient overvoltage),
VIOTM = 12 kV peak
- isolation test voltage (partial discharge test voltage),
Vpd = 2.8 kV peak
ORDERING INFORMATION
C
N
Y
6
#
x
DIP, 400 mil
DIP, 600 mil
DIP, 700 mil
PART NUMBER
AGENCY CERTIFIED/PACKAGE
UL, VDE
DIP-4 HV, 400 mil, high isolation distance
DIP-4 HV, 600 mil, high isolation distance
DIP-4 HV, 700 mil, high isolation distance
PACKAGE
OPTION
CTR
BIN
50 to 300
CNY64
CNY65
CNY66
10.16 mm
CTR (%)
63 to 125
CNY64A
CNY65A
-
15.24 mm
17.8 mm
100 to 200
CNY64B
CNY65B
CNY66B
Document Number: 83540
Rev. 2.1, 24-Feb-11
For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

CNY66 Datasheet

Optocoupler Phototransistor

No Preview Available !

CNY64, CNY65, CNY66
Vishay Semiconductors Optocoupler, Phototransistor Output,
Very High Isolation Voltage
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
tp 10 μs
VR
5
V
IF
75
mA
IFSM
1.5
A
Pdiss
120
mW
Tj
100
°C
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
VCEO
32
V
VECO
7
V
IC
50
mA
tp/T = 0.5, tp 10 ms
ICM
100
mA
Pdiss
130
mW
Tj
100
°C
COUPLER
AC isolation test voltage CNY64
DC isolation test voltage CNY65
t = 1 min
t=1s
VISO
VISO
8200
13.9
VRMS
kV
DC isolation test voltage CNY66
Total power dissipation
Ambient temperature range
t=1s
VISO
13.9
kV
Ptot
250
mW
Tamb
- 55 to + 85
°C
Storage temperature range
Soldering temperature
Tstg
- 55 to + 100
°C
2 mm from case, 10 s
Tsld
260
°C
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Junction capacitance
OUTPUT
IF = 50 mA
VF
VR = 0, f = 1 MHz
Cj
1.25
1.6
V
50
pF
Collector emitter voltage
Emitter collector voltage
Collector emitter leakage current
COUPLER
IC = 1 mA
VCEO
32
IE = 100 μA
VECO
7
VCE = 20 V, IF = 0 A
ICEO
V
V
200
nA
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
IF = 10 mA, IC = 1 mA
VCE = 5 V, IF = 10 mA,
RL = 100
f = 1 MHz
VCEsat
fc
Ck
0.3
V
110
kHz
0.3
pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
www.vishay.com
2
For technical questions, contact: optocoupleranswers@vishay.com
Document Number: 83540
Rev. 2.1, 24-Feb-11


Part Number CNY66
Description Optocoupler Phototransistor
Maker Vishay
PDF Download

CNY66 Datasheet PDF






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