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CPV364M4KPbF Datasheet Fast IGBT

Manufacturer: Vishay

Overview: www.vishay.com CPV364M4KPbF Vishay Semiconductors IGBT SIP Module (Short Circuit Rated Ultrafast IGBT) IMS-2 PRODUCT SUMMARY OUTPUT CURRENT IN A TYPICAL 20 kHz MOTOR DRIVE IRMS per phase (3.1 kW total) with TC = 90 °C TJ Supply voltage Power factor 11 ARMS 125 °C 360 VDC 0.8 Modulation depth (see fig. 1) 115 % VCE(on) (typical) at IC = 13 A, 25 °C Package 1.

General Description

The IGBT technology is the key to Vishay´s Semiconductors advanced line of IMS (Insulated Metal Substrate) power modules.

These modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power MOSFET.

This superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance.

Key Features

  • Short circuit rated ultrafast: Optimized for high speed > 5.0 kHz, and short circuit rated to 10 μs at 125 °C, VGE = 15 V RoHS.
  • Fully isolated printed circuit board mount.