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Vishay Intertechnology Electronic Components Datasheet

DG636E Datasheet

Dual SPDT Analog Switch

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www.vishay.com
DG636E
Vishay Siliconix
0.3 pC Charge Injection, 100 pA Leakage
CMOS ± 5 V / 5 V / 3 V Dual SPDT Analog Switch
DESCRIPTION
The DG636E is a dual SPDT CMOS, analog switch,
designed to operate from a +3 V to +16 V single supply, or
from ± 3 V to ± 8 V, dual supplies. The DG636E is fully
specified at +3 V, +5 V, and ± 5 V.
The DG636E offers ultralow charge injection less than
± 0.4 pC over the entire signal range and leakage currents of
13 pA typical at 25 °C. It offers on resistance of 63 typ.,
and low parasitic capacitance of 3.7 pF source off, and
8.4 pF Drain on. The part is ideal for analog front end, data
acquisition and sample and hold designs providing fast and
precision signal switching.
The DG636E switches one of two inputs to a common
output as determined by the 3-bit binary address lines: A0,
A1, and EN. Each switch conducts equally well in both
directions when on, blocks input voltages up to the supply
level when off, and exhibits break before make switching
action.
All control logic inputs have guaranteed 2 V logic high limits
when operating from +5 V or ± 5 V supplies and 1.4 V when
operating from a 3 V supply.
The DG636E operating temperature range is specified from
-40 °C to +125 °C. It is available in 14 lead TSSOP and the
space saving 1.8 mm x 2.6 mm miniQFN package.
FEATURES
• Ultra low charge injection
(Less than ± 0.3 pC, typ. over the full analog
signal range)
• Leakage current < 0.5 nA max. at 85 °C
(for DG636EEQ-T1-GE4)
• Low switch capacitance (CS(off), 3.7 pF typ.)
• Fully specified with single supply operation at 3 V, 5 V, and
dual supplies at ± 5 V
• CMOS / TTL compatible
• 700 MHz, -3 dB bandwidth
• Excellent isolation and crosstalk performance
(typ. > -60 dB at 10 MHz)
• Fully specified from -40 °C to +85 °C and -40 °C to +125 °C
• 14 pin TSSOP and 16 pin miniQFN package
(1.8 mm x 2.6 mm)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Data acquisition systems
• Medical instruments
• Precision instruments
• Communications systems
• Automated test equipment
• Sample and hold circuit
• Relay replacement
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG636E
mQFN-16
A0 NC NC A1
16 15 14 13
A0 1
DG636E
TSSOP14
ENABLE 1
Logic
12 GND ENABLE 2
Logic
V- 2
11 V+
V- 3
S1A 3
Yxx
S1B 4
10 S2A
9 S2B
S1A 4
S1B 5
Pin 1
Device Marking: Yxx for DG636E
(miniQFN16)
xx = Date/Lot Traceability Code
5 6 77 8
D1 NC NC D2
Top View
D1 6
NC 7
Top View
ENABLE = Hi, all switches are controlled by
addr pins. ENABLE = Lo, all switches are off.
14 A1
13 GND
12 V+
11 S2A
10 S2B
9 D2
8 NC
S17-1518-Rev. B, 09-Oct-17
1
Document Number: 75621
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Vishay Intertechnology Electronic Components Datasheet

DG636E Datasheet

Dual SPDT Analog Switch

No Preview Available !

www.vishay.com
DG636E
Vishay Siliconix
TRUTH TABLE
ENABLE
INPUT
L
H
H
H
H
SELECTED INPUT
A1 A0
XX
LL
LH
HL
HH
ON SWITCHES
DG636E
All Switches Open
D1 to S1A, D2 to S2A
D1 to S1B, D2 to S2A
D1 to S1A, D2 to S2B
D1 to S1B, D2 to S2B
ORDERING INFORMATION
TEMP. RANGE
-40 °C to +125 °C a
Note
a. -40 °C to +85 °C datasheet limits apply.
PACKAGE
14 pin TSSOP
16 pin miniQFN
PART NUMBER
DG636EEQ-T1-GE4
DG636EEN-T1-GE4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
LIMIT
V+ to V-
-0.3 to +18
GND to V-
18
VS, VD
(V-) -0.3 to (V+) + 0.3 or 30 mA,
whichever occurs first
Digital inputs a
(GND) -0.3 to (V+) + 0.3
Continuous current (any terminal)
30
Peak current, S or D (pulsed 1 ms, 10 % duty cycle)
100
Storage temperature
-65 to +150
Power dissipation (package) b
14 pin TSSOP c
16 pin miniQFN d, e
450
525
Thermal resistance (package) b
14 pin TSSOP
16 pin miniQFN
178
152
ESED / HBM
EIA / JESD22-A114-A
2K
ESD / CDM
EIA / JESD22-C101-A
1K
Latch up
JESD78
300
UNIT
V
mA
°C
mW
°C/W
V
mA
Notes
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 5.6 mW/°C above 70 °C
d. Derate 6.6 mW/°C above 70 °C
e. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead
terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip
cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection
S17-1518-Rev. B, 09-Oct-17
2
Document Number: 75621
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000


Part Number DG636E
Description Dual SPDT Analog Switch
Maker Vishay
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