DG636E Datasheet - Vishay

Dual SPDT Analog Switch

DG636E Features

* Ultra low charge injection (Less than ± 0.3 pC, typ. over the full analog signal range)

* Leakage current < 0.5 nA max. at 85 °C (for DG636EEQ-T1-GE4)

* Low switch capacitance (CS(off), 3.7 pF typ.)

* Fully specified with single supply operation at 3 V, 5 V, and dua

DG636E General Description

The DG636E is a dual SPDT CMOS, analog switch, designed to operate from a +3 V to +16 V single supply, or from ± 3 V to ± 8 V, dual supplies. The DG636E is fully specified at +3 V, +5 V, and ± 5 V. The DG636E offers ultralow charge injection less than ± 0.4 pC over the entire signal range and leakag.

DG636E Datasheet (309.70 KB)