Description
The HS817 series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package.
BSI: EN 60065, EN 60950-1:2006 FIMKO UL file no.
Switch-mode power supplies
Line receiver
Computer peripheral interface
Microprocessor system interface
ORDERING INFORMATION
H S 8 PART NUMBER 1
Features
- C 4 E 3.
 
- Rated impulse voltage (transient overvoltage) VIOTM = 6 kVpeak.
 
- Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV.
 
- Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS.
 
- Rated recurring peak voltage (repetitive) VIORM = 850 Vpeak.
 
- Creepage current resistance according to IEC 112, comparative tracking index: CTI  250.
 
- Thickness through insulation  0.4 mm.
 
- Isolation materials according to UL 94 V-O.