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IRF640PbF - Power MOSFET

Download the IRF640PbF datasheet PDF. This datasheet also covers the IRF640 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Key Features

  • 200 0.18.
  • Dynamic dV/dt Rating.
  • Repetitive Avalanche Rated.
  • Fast Switching.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Compliant to RoHS Directive 2002/95/EC Available RoHS.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF640-Vishay.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRF640, SiHF640 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 70 13 39 Single D FEATURES 200 0.18 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.