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IRF644N Datasheet Power MOSFET

Manufacturer: Vishay

Overview: IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) 250 V RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 54 Qgs (nC) 9.2 Qgd (nC) 26 Configuration Single 0.

General Description

Fifth generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.

Key Features

  • Advanced Process Technology.
  • Dynamic dV/dt Rating.
  • 175 °C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Ease of Paralleling.
  • Simple Drive Requirements.
  • Lead (Pb)-free Available Available RoHS.

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