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Vishay Intertechnology Electronic Components Datasheet

IRF644NL Datasheet

Power MOSFET

No Preview Available !

IRF644NL pdf
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
250 V
RDS(on) (Ω)
VGS = 10 V
Qg (Max.) (nC)
54
Qgs (nC)
9.2
Qgd (nC)
26
Configuration
Single
0.240
I2PAK (TO-262)
TO-220
D
S
D
G
D2PAK (TO-263)
S
D
G
G
GD
S
S
N-Channel MOSFET
FEATURES
• Advanced Process Technology
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
Fifth generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on
resistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0 W in a typical surface mount application.
ORDERING INFORMATION
Package
TO-220
D2PAK (TO-263)
Lead (Pb)-free
IRF644NPbF
SiHF644N-E3
IRF644NSPbF
SiHF644NS-E3
SnPb
IRF644N
SiHF644N
Note
a. See device orientation.
IRF644NS
SiHF644NS
D2PAK (TO-263)
IRF644NSTRLPbFa
SiHF644NSTL-E3a
IRF644NSTRLa
SiHF644NSTLa
D2PAK (TO-263)
IRF644NSTRRPbFa
SiHF644NSTR-E3a
IRF644NSTRRa
SiHF644NSTRa
I2PAK (TO-262)
IRF644NLPbF
SiHF644NL-E3
IRF644NL
SiHF644NL
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91038
S-83000-Rev. A, 19-Jan-09
www.vishay.com
1


Vishay Intertechnology Electronic Components Datasheet

IRF644NL Datasheet

Power MOSFET

No Preview Available !

IRF644NL pdf
IRF644N, IRF644NS, IRF644NL, SiHF644N, SiHF644NS, SiHF644NL
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Currenta
Linear Derating Factor
VGS at 10 V
TC = 25 °C
TC = 100 °C
VGS
ID
IDM
Single Pulse Avalanche Energyb
Avalanche Current
Repetitive Avalanche Energy
EAS
IAR
EAR
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Mounting Torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 5.0 µH, RG = 25 Ω, IAS = 8.4 A (see fig. 12).
c. ISD 8.4 A, dI/dt 378 A/µs, VDD VDS, TJ 175 °C.
d. 1.6 mm from case.
e. This is a calculated value limited to TJ = 175 °C.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambientc
Case-to-Sink, Flat, Greased Surfacec
Maximum Junction-to-Case (Drain)
Maximum Junction-to-Ambient (PCB Mount)d
RthJA
RthCS
RthJC
RthJA
TYP.
-
0.50
-
-
LIMIT
250
± 20
14
9.9
56
1.0
180e
8.4
15
150
7.9
- 55 to + 175
300d
10
1.1
MAX.
62
-
1.0
40
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
ΔVDS/TJ
VGS = 0 V, ID = 250 µA
Reference to 25 °C, ID = 1 mA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VGS = 20 V
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IDSS
RDS(on)
gfs
VDS = 250 V, VGS = 0 V
VDS = 200 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 8.4 Ab
VDS = 50 V, ID = 8.4 Ab
MIN. TYP. MAX. UNIT
250 -
-V
- 0.33 - V/°C
2.0 - 4.0 V
- - ± 100 nA
- - 25
µA
- - 250
- - 0.240 Ω
8.8 -
-S
www.vishay.com
2
Document Number: 91038
S-83000-Rev. A, 19-Jan-09


Part Number IRF644NL
Description Power MOSFET
Maker Vishay
Total Page 8 Pages
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IRF644NL pdf
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